Abstract
Amorphous silicon precipitated on SiC films by means of argon excimer laser irradiation were investigated. Raman spectra show that the observed bands of the amorphous silicon depended on crystalline quality of SiC film. In case of a preferentially oriented polycrystalline SiC film, precipitated amorphous silicon is similar to the amorphous silicon produced by a radio frequency (rf) discharge method based on similarities of Raman scattering data.
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