Abstract
We find that the incorporation of Ge into SiC during the metalorganic chemical vapor deposition growth process improves the crystalline quality of SiC films grown on Si (111) substrates at 1000 °C. Secondary ion mass spectroscopy results indicate that Ge does not act as a surfactant, but rather it incorporates throughout the entire film. Transmission electron microscopy results show that high quality, single crystalline SiC films of up to 80 nm thickness are repeatably obtained for GeH4 flow rates ranging from 20 to 30 sccm. Higher GeH4 flow rates induce twinning and result in a reduced growth rate and increased surface roughness. Lower GeH4 flow rates result in polycrystalline and/or amorphous-like SiC films similar to what is normally obtained at such a low growth temperature. We discuss the role of Ge during growth and how its presence in the reactor during Si substrate carbonization results in higher quality SiC films than normally achieved for growth temperatures of 1000 °C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
