Abstract
Strontium sulfide doped with cerium (SrS:Ce) thin-film electroluminescent (TFEL) devices annealed in the presence of H2S are investigated. X-ray diffraction patterns of SrS phosphor layers show a preferential (220) orientation, and cerium accumulated in the lower portion of the phosphor in samples annealed in H2S. The relative concentrations of S and Sr (S/Sr ratios) of the phosphors before annealing are thought to be responsible for the EL characteristics. Annealing in H2S had a significant effect on the crystallinity of phosphors with low S/Sr ratios before annealing.
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