Abstract
A novel SiC semi-superjunction-Schottky Barrier Diode (Semi-SJ-SBD) structure is proposed, which is the combination of super-junction (SJ) structure and conventional drift region structure. The proposed structure can significantly reduce the specific on-resistance (Ron-sp) and improve the forward characteristics. The breakdown voltage (VB) and specific on-resistance (Ron-sp) in different SJ depth and width are studied using two-dimensional simulator Medici and compared with conventional SiC SBD. The results show that Ron-sp is greatly reduced (greater than 10%) with VB unchanged (less than 4%) when the SJ width is chosen as 2—3 μm and SJ depth is deeper than 5 μm.
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