Abstract
A new touch sensor device has been demonstrated with molybdenum disulfide (MoS2) field effect transistors stacked with a piezoelectric polymer, polyvinylidene fluoride–trifluoroethylene (PVDF–TrFE). The performance of two device stack structures, metal/PVDF–TrFE/MoS2 (MPM) and metal/PVDF–TrFE/Al2O3/MoS2 (MPAM), were compared as a function of the thickness of PVDF–TrFE and Al2O3. The sensitivity of the touch sensor has been improved by two orders of magnitude by reducing the charge scattering and enhancing the passivation effects using a thin Al2O3 interfacial layer. Reliable switching behavior has been demonstrated up to 120 touch press cycles.
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