Abstract
The effects of the reactive Ti layer on the resistive switching characteristics of TiN/Ti/TiO2/TiN resistive random access memory (ReRAM) are investigated. Nitridation at the top region of Ti during reactive sputtering of the TiN layer and oxygen gettering of Ti from TiO2 make the TiON/TiO2-x interface. It results in TiO2 with a higher concentration of oxygen vacancies during metal alloy annealing, resulting in the low-initial-resistance state. This leads to a stable bipolar switching after the first set process. A larger thickness of Ti decreases resistance value in the high-resistance state, which enables the adjustment of on/off resistance ratio.
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