Abstract
Using a solution of hexafluorotitanic acid and boric acid, high-refractive-index and high-dielectric-constant films can be deposited on silicon substrates. The constituents of the films were Ti, Si and O analyzed by secondary-ion mass spectroscopy, which indicates that the structure of the films is TixSi(1-x)Oy. The Ti/Si ratio can be modulated by the mole concentration of boric acid. The leakage current density and dielectric constant of the deposited films can be improved by thermal annealing in N2 ambience.
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