Abstract
Nickel oxide (NiO) film was formed on the SiO<sub>2</sub>/Si substrate at the room temperature with water cooling system by reactive RF sputter. The feasibility of bolometric material was investigated, and a microbolometer using the NiO film was fabricated and evaluated. The NiO films were analyzed by using grazing-incidence X-ray diffraction (GIXRD). The NiO(111), NiO (200), and NiO (220) peaks expected as the main spectrum were dominantly appeared on the polycrystalline NiO films. The representative resistivity acquired at the O<sub>2</sub>/(Ar+O<sub>2</sub>) ratio of 10% sample was about 40.6 Ωcm. The resistivity of 40.6 Ωcm obtained in low oxygen partial pressure was inclined to reduce to 18.65 Ωcm according to the increase of the O<sub>2</sub>/(Ar+O<sub>2</sub>) ratio. The TCR value of fabricated microbolometer was −1.67%/℃ at the NiO film resistivity of 40.6 Ωcm. The characteristics of fabricated NiO film and microbolometer were demonstrated by XRD patterns, TCR value, and SEM image.
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