Abstract
The formation of the main radiation defects in silicon (A and E centers, C i -C s and C i -O i complexes) in dislocation-free crystals and crystals with a low dislocation density (N D ≃1×104 cm−2) have been investigated as a function of the oxygen density N O. The characteristic features of the accumulation and annealing of radiation defects observed in dislocation-free silicon are interpreted taking into account the presence of interstitial inclusions in the volume of such crystals. It has been determined that the gettering properties of the inclusions depend in a complicated manner on the oxygen concentration and are most obvious when N O⋍3×1016 cm−3.
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