Abstract
This paper reports a method to suppress the ambipolar effect and enhance the on-state current in Tunnel Field Effect Transistor by exploiting the advantages of Silicon-Germanium (SiGe). The optimum hetero-dielectric device architecture is proposed with highly doped SiGe pocket at source-channel junction. Further, a detailed investigation in both static as well as RF performance is carried out for the proposed device in comparison with the conventional one. Wide range of performance metrics such as ambipolar current (IAMB), on-off ratio (ION/IOFF), effect of quantum correction model, gate-to-drain capacitance (Cgd), gate-to-source capacitance (Cgs), transconductance (gm), Gain band-width (GBW) product, Cut-off frequency (fT) are evaluated and compared among various device architectures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
