Abstract
Si has been widely used as the primary semiconductor material for electronic device fabrication. Due to the limitation of its electrical properties such as electron and hole mobilities, however, Ge would be one of the candidates for future electronic device materials because of its higher mobilities of both carriers. However, GeO2 is known to suffer from water solubility and its reaction with the Ge substrate to cause GeO desorption at high temperature. In this research, we attempted to improve interface characteristics by depositing Hf on the GeO2/Ge structure and applying heat treatment (PMA: Post Metallization Annealing). As a result, it is clearly shown that PMA treatment for appropriate thicknesses of the deposited Hf-metal film reduces both the D it (interface trap density) and the leakage current, and also improves the insulating properties. Thus it was confirmed that Hf-PMA is an effective solution to reduce the Dit values for GeO2/Ge stacked structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
