Year-end Sale % OFF 
Abstract
In order to maximise the absoprtion efficiency of X-ray detectors for high energy photons above 20 keV, compound semiconductor sensors with high atomic number (Z) are under investigation. A promising material for future detector systems is Cadmium Zinc Telluride (CdZnTe). Redlen Technologies developed a novel CdZnTe material, optimised for applications with high photon fluxes. Such a material was used to fabricate pixelated CdZnTe sensors with a pitch of 55 μm and 110 μm. The sensors were flip-chip bonded to Timepix ASICs and their performance was characterised at the European Synchrotron Radiation Facility (ESRF) with conventional X-ray sources and monochromatic sychrotron beams using the MAXIPIX readout system. We present results concerning the uniformity, the stability and the spatial resolution of the sensors, obtained with X-ray energies up to 60 keV.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
