Abstract
By using direct current (DC) and radio frequency (RF) co-sputtering deposition, multilayer Si3N4 films composed of alternately DC layer and RF layer were prepared. Phase composition, microstructure, and hardness/toughness of different Si3N4 films were studied. X-ray diffraction results showed that DC layer was amorphous Si3N4 film, while RF layer was nanocrystalline Si3N4 film. The hardness of amorphous Si3N4 film was higher than that of nanocrystalline Si3N4 film and the plasticity of nanocrystalline Si3N4 film was higher than that of amorphous Si3N4 film. Furthermore, the hardness/toughness of multilayer Si3N4 films was obviously higher than that of the single Si3N4 film and the plasticity was higher than that of single nanocrystalline Si3N4 film, which can be attributed to the fact that a large number of interface hindered the increasing of particles, thus, the fine particles and the interface strengthened the multilayer films, while the propagation of micro-crack was prevented by amorphous/nanocrystalline layer of multilayer Si3N4 film.
Published Version
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