Characterisation of 1200V, 35A SiC Mosfet using double pulse circuit

Abstract

The explicit features of wide band gap devices such as silicon carbide (SiC) and gallium nitride (GaN) propelled the relentless demand for higher power density and higher efficiency in enormous power-electronic applications. SiC-based power switches are adopted in solar inverter, electric traction and other automotive electrical subsystems due to their admirable characteristics compared with silicon (Si) based IGBT devices. Instead of the unique features, device experiences ringing and surges due to the presence of parasitics in circuit layout. This paper presents the switching characterization of 1200V, 35A SiC Mosfet in substance to parasitics under inductive clamp double pulse circuit. The SiC Mosfet based double pulse circuit is tested for various voltages and currents to obtain the switching characteristics and switching losses analysis. Characterisation of the device assists to model systems with wide band gap devices to acquire high power density.