Abstract
Emerging wide-bandgap (WBG) devices, such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron-mobility transistors (HEMTs) provide new opportunities to realize high efficiency, high power density, and high reliability in several kHz, 1 kV input, and several kW output applications. However, the performance comparison between SiC MOSFETs and GaN HEMTs in high-voltage, high-frequency, medium-high-power DC conversion applications have not yet been investigated thoroughly. Two 1 kV, 3 kW LLC prototypes with GaN and SiC devices are built to perform a careful comparison of the prototypes in terms of parameters, power density, zero voltage switch realization, and overall efficiency. This provides guidance for the appropriate evaluation of WBG devices in high-voltage, high-frequency, and medium-high-power applications.
Highlights
Emerging wide-bandgap (WBG) devices, such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron-mobility transistors (HEMTs) provide new opportunities to realize high efficiency, high power density, and high reliability in several kHz, 1 kV input, and several kW output applications
From the comparison of the device parameters shown in Tab. 5, it is noted that the equivalent on resistance Rds(on) of eGaN HEMTs is smaller than that of the SiC MOSFET
The eGaN HEMTs have a smaller drain-to-source break down voltage, they produce less conduction and reduce switching loss compared to the SiC MOSFETs
Summary
With a tendency for higher voltage and increased power demands, traditional silicon (Si) devices can only meet the DC conversion requirements in applications used in, for example, ships, unmanned aerial vehicles (UAVs) and cars[1,2]. The appearance of emerging wide-bandgap (WBG) devices, such as silicon carbide (SiC) MOSFETs and gallium nitride (GaN) high-electron-mobility transistors (HEMTs), provides new opportunities to address this problem [3,4]. Compared with Si devices, SiC MOSFETs and GaN HEMTs possess a better figure of merit (FOM). They can realize higher with- standing voltage, lower loss, and higher frequency, which helps break down the technical barriers of efficiency, power density, and reliability in several kHz, 1 kV input, and several kW output applications [5]
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