Abstract
Theoretical analysis of the dependences of electron and hole lifetimes on the concentration of recombination impurity atoms at a small departure from equilibrium is carried out. The model of a single recombination level is considered. It is shown that the carrier lifetimes may strongly non-monotonically depend on the concentration of recombination impurity atoms. The conditions under which this effect takes place are determined, and the physical mechanisms responsible for it are found out. The formulae for the locations of the extrema of the considered dependences are obtained.
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