Abstract
This chapter describes the present knowledge of Cu(In,Ga)Se2 (copper indium gallium (di)selenide)-based heterojunction thin film solar cells. The deposition of the buffer layer, or more generally speaking, the formation of the heterojunction, is a critical issue. The surface chemistry-taking place during heterojunction formation, and also during postdeposition treatments, is decisive for the final device performance. Both processes greatly affect not only the surface defects, and therefore the charge distribution in the device, but also the defects in the bulk of the absorber. Concentrated effort and major progress in these tasks would not only allow one to push the best efficiencies further towards 20%, but would also provide a sound knowledge base for the various attempts at the commercialization of Cu(In,Ga)Se2 solar cells. The surface properties of Cu(In,Ga)Se2 thin films are especially important as this surface becomes the active interface of the completed solar cell. However, the band diagram of the zinc oxide/CdS/Cu(In,Ga)Se2 heterojunction, especially the detailed structure close to the CdS/Cu(In,Ga)Se2 interface, is still under debate.
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