Abstract
The optical and electrical properties of proton irradiated Cu(In,Ga)Se2 (CIGS) solar cells and the composed thin films such as transparent conducting oxide (TCO) and CIGS were investigated. The transmittance and resistivity of TCO window layers remained constant for a fluence of up to 3×1015 cm-2. For CIGS thin films, the photoluminescence (PL) peak intensity tended to decrease, possibly because the number of nonradiative recombination centers increased under proton irradiation. In addition, the PL spectra of irradiated CIGS solar cells suggested that the CIGS absorber layer and/or the depletion layer around the CdS/CIGS interface are more prone to degrade than other layers. These results constitute the first step in clarifying the degradation mechanism of CIGS solar cells.
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