Chapter 93 Dislocations in Silicon at High Stress

Abstract

This chapter is devoted to the structure and properties of dislocations obtained at high stress in silicon, which have been shown to have different core structures from the ones observed at low stress and high temperature. TEM observations of high-stress deformation microstructures revealing the existence of a specific type of dislocations, which exhibit a non-dissociated core and are expected to lie in the shuffle set, are reported together with relevant atomistic computations. The results of experiments and computations are confronted in order to obtain a comprehensive view of the high-stress deformation regime. The transition between the two deformation regimes is also discussed.