Chapter 9 - Magnetic properties of doped germanium nanostructures

Abstract

Recently, many efforts have been made to tune the ferromagnetic properties of the semiconductor nanostructures to achieve their importance in variety of modern applications in electronic industries. It becomes challenge for material scientist to perceive a prominent magnetic nanomaterial with controlled spin degrees of freedom. In this chapter, we have emphasized on variation in dopant materials in germanium (Ge) nanostructures and investigation about their behavior as a magnetic material at different operating temperatures. Ge is a group IV element which is diamagnetic in nature. For fabrication of high-speed spintronic devices, industry needs permanent magnetic materials working at high temperature. As Ge is having high mobility, it can be beneficial in high-speed electronics. Ge nanostructures became potential candidate as a ferromagnetic material after doping transition metals. Transition ions such as Mn, Cr, Co, and Fe can convert Ge diamagnetic material to ferromagnetic material. Thus, Ge could be the promising material to use as one of the best ferromagnetic material after doping transition ions in it. The doped Ge nanostructures can be a favorable material for fabrication of electronic devices especially in relation with high-speed spintronic devices.