Abstract
Metal halide perovskites (MHPs) recently have attracted much research and industrial interest in the field of next-generation solar cells because of their extraordinary high power conversion efficiencies (PCEs) of up to 25.5% in just a decade. Despite the great improvement in the efficiency of perovskite solar cells (PSCs), their theoretical efficiency limit and stability issues attributed to defects and degradation of MHPs need to be further addressed for their rapid commercialization. Imperfections of MHPs and their thin-film interface contacts, including ionic nature, defects of surfaces and grain boundaries, ion migration and diffusion, organic cation vacancies, and halide anion vacancies, have been unquestionably considered the main internal factors that limit theoretical efficiency and induce device instability. Thus doped MHPs are highly desired for designing high-quality and stable perovskite films. In this chapter the rudimentary properties of doped MHPs will be discussed: (1) intrinsic doping, such as A-site, B-site, and X-site doping; (2) extrinsic doping including perovskite composites with organic/inorganic materials. Furthermore, the recent advances toward highly efficient and stable PSCs by utilizing the doped MHPs will be presented and analyzed.
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