Abstract
Publisher Summary This chapter deals with ion-implanted quantum-well structures. In particular, the physical issues resulting from interdiffusion between the layers, intermixing phenomena, and channelling and disordering effects in heterostructures are addressed. The major growth area within semiconductor physics has been the study of layered structures, grown by molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), or chemical beam epitaxy (CBE). These structures consist of semiconductor layers withthe interface geometry, doping level, and chemical composition defined with atomic-scale precision. Superlattices (SLs) and multiple quantum wells (QWs) are artificially structured materials made by interleaving layers of semiconductors with different electronic properties. In this way it is possible to control the electronic properties of the SL and QW by redesigning matter on a quantum mechanical scale. Furthermore, it has extremely important device applications in that it allows the design of semiconductors that do not exist in nature. In particular, it gives control over important material parameters such as the band gap (through confinement effects), the carrier concentration, the carrier mobility, and the carrier lifetime.
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