Abstract
This chapter describes semiconductor pump lasers used for pumping broad-band Raman amplifiers and referred to as 14xx-nm pump lasers because they operate in the wavelength region extending from 1400 to 1500 nm. The chapter introduces the fundamental concepts behind high-power pump lasers. To realize a high-power laser module, the following three items are important: design of semiconductor laser chip, high capability of heat exhaustion, and high coupling efficiency. To enhance the stimulated emission for laser operation, population inversion by current injection in semiconductor lasers is an important phenomenon. To achieve effective population inversion, the double-heterostructure (DH) laser has been widely used as a basic structure for highly efficient laser diodes.
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