Abstract
The chapter presents an overview of developments in the side-illumination tip-enhanced Raman spectroscopy (TERS) technique, and applications of TERS for the characterization of semiconducting materials and structures. The nano-Raman system was modified to measure optical properties of the tips using the principle of total internal reflection microscopy. The signal in TERS consists of two components, including the background signal coming from the entire laser-illuminated spot and the locally enhanced signal that comes from the nanoscale region in the vicinity of the tip. An important parameter for apertureless near-field optics is the enhancement of the signal provided by the tip. Enhancement is an increase in the Raman signal intensity in the small volume around the tip caused by the plasmon resonance of the tip. The experimental realization of optimum resonant enhancement conditions in TERS requires the measurement of the wavelength-dependent optical response of the tip apex. TERS can be effectively applied for the analysis of thin films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
