Abstract
With the onset of submicron technologies, GHz RF circuits can now be realized in a standard CMOS process. However, due to the unavailability of RF models which accurately predict MOSFET device behavior at high frequencies, the realization of commercial CMOS RF components is difficult. In this chapter, we discuss noise models, including thermal, flicker, shot noise, etc., in the BSIM-BULK compact model. We also discuss gate and substrate networks, which are important for accurate model behavior in the millimeter range.
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