Abstract
This chapter discusses hydrogen phenomena in hydrogenated amorphous silicon. Hydrogen's property to saturate dangling bonds of the host material and thus to reduce the concentration of defect states is the role of hydrogen in amorphous silicon, germanium, and related alloys during the past two decades. Some important characterization methods such as infrared (IR) absorption, hydrogen effusion, and hydrogen diffusion measurements by secondary ion-mass spectroscopy (SIMS) are applied to various series of hydrogenated amorphous silicon films with greatly different hydrogen concentrations. Infrared (IR) absorption and hydrogen effusion measurements provide rapid characterization for the bonding configurations and the thermal stability of hydrogen, respectively, in hydrogenated silicon materials. The measured transmission spectrum is normalized to the transmission spectrum of the crystalline silicon substrate, and the absorption coefficient is determined by applying Lambert–Beer's law.
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