Chapter 5 - Fabrication and characterization of ferroelectric oxide thin films

Abstract

This chapter provides information on prevalent thin film deposition techniques for ferroelectric oxides and thin film characterizations. Key issues in fabricating multicomponent ferroelectric oxide thin films include controlling the stoichiometry of films and enhancing structural properties to preserve useful physical properties of the materials. Exact control of film stoichiometry can reduce electronic defects—including oxygen vacancies—in the films and optimize physical properties of the films. This control depends on various deposition techniques and process conditions. From the standpoint of film growth mechanisms nucleation and subsequent growth of films govern the microstructural evolution of films. Minimization of structural defects can enhance the physical properties of films. Also, control of growth orientation may be possible and thus enable optimization of the physical properties of films for various applications. These issues require basic understanding of thin film science relevant to process-structure-property relationships. With advances in thin film technology, a challenging issue is the growth of commensurate crystalline oxides on semiconductors.