Abstract
This chapter describes the development of a novel solid state photoconversion device that operates efficiently within the low intensities range of radiant energy. The device has voltage correction characteristics that depend on the level of radiant energy. As is known, the floating voltage of conventional photovoltaic Si-based cell depends directly upon the intensity of radiant energy, which strikes the surface of a cell end. Its value increases for about 100 mV, whereas the value of radiant energy changes over 10 times. The special technology of receiving the photo-voltaic cells on the basis of the monocrystal silicon is developed.
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