Abstract
This chapter discusses the detection of dislocations by X-ray and other techniques. The number of dislocations in a crystal can be determined qualitatively from measurements of their overall effect on the various bulk properties. For example, it is possible to obtain, at any rate to within an order of magnitude, the dislocation content of a crystal from plastic deformation experiments. Similarly, the measurements of the electrical properties and of the diffusion and precipitation of impurities in the crystal provide information that can be used for assessing the dislocation density. However, more precise and relatively simple methods for this determination is given by the formation of etch pits at the sites at which dislocations intersect with the surface of the crystal. The overall dislocation density can also be determined, with reasonable accuracy, from X-ray diffraction measurements.
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