Abstract
Halide perovskite emerged as an outstanding photovoltaic material in 2009, and simultaneously, its extraordinary potential has been exploited for other optoelectronic applications. A fundamental understanding of their structural properties is highly essential to explore and fabricate novel materials and highly efficient devices. The current chapter detailed the effect of various structural factors such as crystal structure and morphology, grain size, nanoscale dimension, hierarchical structure, and patterned arrangement on their various optoelectronic properties. The effect of stoichiometric modifications on various optoelectronic properties is discussed in detail. The origin and effect of quantum confinement and dielectric confinement in layered structured halide perovskites are elaborated thoroughly. Low thermal conductivity in perovskite limits its applications in different devices. The thermal conductivity of various perovskite compositions is explained in detail. Finally, the ferroelectric and ferroelastic behavior of halide perovskite is elaborated.
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