Abstract
The chapter presents a study on the incorporation of oxygen into silicon crystals. The chapter discusses how oxygen is incorporated during silicon growth and technologies for the control of concentration and uniformity. The chapter presents a review of the single crystal preparation by float zone and Czochralski (CZ) growth methods. The chapter presents a discussion of the characteristics of CZ silicon growth, particularly the understanding of the oxygen incorporation mechanisms, both macro- and microscopic. Finally, the controlled oxygen incorporation is discussed in normal CZ, and their modified versions, CZ growth under applied magnetic field and continuous CZ growth. Interstitial oxygen is perhaps the most important consideration in silicon crystals for VLSI/ULSI fabrication. The relevance of oxygen to integrated circuit fabrication is due primarily to oxygen's ability to form oxide precipitates and to generate lattice defects in a controlled manner for impurity gettering during device processing. In addition, the presence of interstitial oxygen in silicon gives an added strengthening effect to the silicon lattice, which can prevent plastic deformation and slip during wafer thermal processing.
Published Version
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