Abstract
The insulated gate bipolar transistor (IGBT) can be configured to provide forward and reverse blocking voltage capability using the symmetric structure or only forward blocking voltage capability using the asymmetric structure. The control of current flow through the IGBT can be obtained by using either a planar D-MOS gate structure or a trench U-MOS gate structure. The collector region doping profile can be adjusted to reduce the injected carrier density with the transparent emitter concept. Complementary n-channel and p-channel IGBT structures are useful for AC power control. Lateral IGBTs are of interest for integration with control circuits. Novel IGBT structures that allow enhanced performance are described.
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