Abstract
This paper aims to describe the physical behaviour of different lateral insulated gate bipolar transistor (LIGBT) structures. It reviews a variety of LIGBTs and a new modification of the basic LIGBT structure consisting of a buried layer, an auxiliary cathode and a highly doped sinker between the MOS channel and the auxiliary cathode. Results from two-dimensional numerical simulations show an improvement in the device current in comparison with other LIGBT structures.
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