Abstract
The memristor, a two-terminal electrical component, was invented by Chua and was considered as the fourth fundamental circuit element besides resistor, capacitor, and inductor. After the implementation of a solid-state memristor in HP laboratories, there are numerous researches related to memristor-based system. Theoretical models, fundamental features, numerical simulation and complexity of the memristor have been presented. Different kinds of memristors have been proposed such as the titanium dioxide memristor, polymeric memristor, layered memristor, ferroelectric memristor, spintronic memristor, and carbon nanotube memristor. It is worth noting that the memristor is a potential candidate for applications like switching devices, neural networks, and especially memory elements. Resistive random-access memory (RRAM or ReRAM) displays significant benefits for portable devices because of its non-volatile characteristic and small structure. In this work, we introduce an organic RRAM, which implemented by using commercial ink-jet printer. Design process and fabrication are described to show the advantages of our approaches. Moreover, a practical application example to demonstrate the feasibility of our RRAM is presented. We believe that the proposed RRAM is appropriate for emerging memories in smart devices.
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