Abstract
In this work, we provide a comprehensive discussion on the various models proposed for the design and description of resistive random access memory (RRAM), being a nascent technology is heavily reliant on accurate models to develop efficient working designs and standardize its implementation across devices. This review provides detailed information regarding the various physical methodologies considered for developing models for RRAM devices. It covers all the important models reported till now and elucidates their features and limitations. Various additional effects and anomalies arising from memristive system have been addressed, and the solutions provided by the models to these problems have been shown as well. All the fundamental concepts of RRAM model development such as device operation, switching dynamics, and current-voltage relationships are covered in detail in this work. Popular models proposed by Chua, HP Labs, Yakopcic, TEAM, Stanford/ASU, Ielmini, Berco-Tseng, and many others have been compared and analyzed extensively on various parameters. The working and implementations of the window functions like Joglekar, Biolek, Prodromakis, etc. has been presented and compared as well. New well-defined modeling concepts have been discussed which increase the applicability and accuracy of the models. The use of these concepts brings forth several improvements in the existing models, which have been enumerated in this work. Following the template presented, highly accurate models would be developed which will vastly help future model developers and the modeling community.
Highlights
This new age of computing requires a technology being capable to match its growth
Value of p has been increased from p = 1 to p = 80 and the results are shown in Fig. 22, which showcase the scaling features of the window function
Many of the recent models, such as Stanford/ ASU model, Gonzelez-Cordero et al model, Prodromakis model, have provided apt explanations for resistive random access memory (RRAM) processes based on the early models
Summary
This new age of computing requires a technology being capable to match its growth. The new technology should be able to meet the demands of improved performance and scalable to cater to the future devices. Memristors, postulated in 1971 [1] by Leon O. Chua seems to fulfill these requirements and laid the foundation for new classes of devices. Memristors, short for “memory-resistors,” are basic two-terminal devices which remember their internal resistance state depending on the history of the input stimulus provided. Chua devised that the memristors are characterized by a relationship between flux and charge, which are the time integrals of current and voltage, respectively
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