Abstract

The term “hybrid silicon laser” refers to a laser that has a silicon waveguide and a III–V material that are in close optical contact. In this structure the optical confinement can be easily transferred from one material to the other and intermediate modes exist for which the light is contained in both materials simultaneously. In hybrid silicon lasers, the optical gain is provided by the electrically pumped III–V material and the optical cavity is ultimately formed by the silicon waveguide. This type of laser can be heterogeneously integrated with silicon components that have superior performance compared to III–V components. These lasers can be fabricated in high volumes as components of complex photonic integrated circuits, largely with CMOS-compatible processes. These traits are expected to allow for highly complex, non-traditional photonic integrated circuits with very high yields and relatively low cost of manufacturing. In this chapter we discuss the theory of hybrid silicon lasers, wafer bonding techniques, examples of experimental results, examples of system demonstrations based on hybrid silicon lasers, and prospects for future devices.

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