Abstract
The energy (E) available to electrons in semiconductors occur in broad bands that depend upon the magnitude and direction of the wave vector (k). The conduction bands correspond to energies above 0eV, while the valence bands correspond to negative energies. For Si, Ge, GaAS, and AlAs, the maxima of the valence bands occurs at the symmetry point denoted by Γ. GaAs is one of only a few semiconductors for which the minimum in the conduction band also occurs at Γ and purely optical transitions between the valence and conduction bands can occur.
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