Chapter 11 - Advances in InSb and InAs Nanowire Based Nanoelectronic Field Effect Transistors

Abstract

III–V semiconducting materials have been long recognized as potential candidates for future nanoelectronics and nanophotonic devices. Recent developments in precision growth techniques of defect-free electronic materials at micro/nanoscale, state-of-the art device fabrication, and advances in the characterization techniques/tools have opened new opportunities and possibilities for probing related materials and devices. Indium antimonide (InSb) and Indium arsenide (InAs) are two III–V candidates possessing a number of special properties such as low bandgap, direct electronic energy gap, high electronic mobilities at room temperature, and high spin–orbit coupling. Additionally, one-dimensional form of InSb and InAs [i.e., the nanowires (NWs)] with suitable metal electrodes/current collectors have shown numerous physical insights in recent years and have provided signatures of number of unique possibility for future device applications. This chapter overviews some of the key material properties and advances in future nanoelectronics devices based on InSb and InAs NWs.