Abstract
This chapter describes the basic principles of power amplifiers design procedures. Based on the spectral-domain analysis, the concept of a conduction angle is introduced with simple and clear analyses of the basic Classes-A,AB,B, and C of the power-amplifier operation. Classes of operation based on a finite number of harmonics are discussed and described. Nonlinear models are given for MOSFET, MESFET, HEMT, and bipolar devices (including HBTs), which have very good prospects for power amplifiers using modern microwave monolithic integrated circuits. The effect of the device input parameters on the conduction angle at high frequencies is explained. The concept and design of push-pull amplifiers using balanced transistors are presented. The possibility of the maximum power gain for a stable power amplifier is discussed and analytically derived. The parasitic parametric effect due to the nonlinear collector capacitance and measures for its cancellation in practical power amplifier are discussed. Finally, the basics of the load-pull characterization and distortion fundamentals are presented.
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