Channelling effect measurements of 4He-induced damage in V 3Si single crystals

Abstract

Disorder produced by 0.3 MeV 4He ions in V 3Si has been analysed by 2 MeV 4He ion channelling measurements. In the region of low damage level (near the surface) a narrowing of about 10% in the ψ 1 2 values and an increase in X min has been observed along the V chains in V 3Si. The empirical formulas from Barrett based on Monte Carlo Computer calculations have been used for several model calculations. The best fit to the observed results was obtained by assuming an average displacement of 0.115 Å of all V atoms from the chain.