Abstract
Abstract The channeling behaviour of 1.8 MeV He+ ions scattered from the interface region of an epitaxially grown 2300 A, Al single crystal film on a GaAs (001) oriented substrate was examined. The high channeled scattering yield from the GaAs substrate was caused by disorder at the crystal-crystal interface. The type of channeling behaviour in a substrate for the case of an ideal crystalline overlayer was experimentally modeled by scattering an ion beam that had channeled through a 5000 A thick Si crystal from a clean GaAs (001) surface.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
