Channeled implantation of magnesium ions in gallium nitride for deep and low-damage doping

Abstract

Ion implantation into p-type gallium nitride (GaN) to a depth of several microns for power devices is a challenge because their activation is disturbed by the damage caused by implantation. To reduce this damage, a channeled implantation technique was applied to implant magnesium (Mg) ions into GaN (0001). Compared with random implantation, channeled implantation was demonstrated to implant and activate ions in >10 times deeper regions. Thus, the channeled implantation technique is indispensable for the deep implantation of Mg ions into GaN devices.