Abstract
We have investigated, by using Monte Carlo simulations, the effects of channel thickness on the breakdown dynamics in InP-based lattice-matched HEMTs (LM-HEMTs). Breakdown is due to the parasitic bipolar action of holes generated by impact ionization and accumulated in the low electric field regions near the source. Our results show that channel shrinking results in an increase in time-to-breakdown values due to holes real-space-transfer effects occurring in thin channel devices. The breakdown behavior of thin-channel devices (channel thickness /spl les/20 nm) is dominated by the accumulation of holes in the InAlAs buffer layer; in thick-channel devices breakdown is due to the parasitic bipolar action of holes accumulating in the InGaAs channel. These results suggest a frequency dependence of breakdown which can be relevant for power rf device applications and/or in the study of device survivability to rf overstress.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.