Abstract
Drift mobility as a function of gate voltage has been measured in HFETs fabricated by MOVPE to a common layer structure, but with varying pinch-off voltage attributed to varying deep level defect densities. The mobility reached a peak of 2000 cm2/Vs for the best samples at room temperature. At high number density the layers showed a common mobility against gate voltage curve, which is attributed to the mobility being related to surface electric field rather than number density.
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