Abstract
In this work, we have investigated the effect of Antimony counter-doping in channel region of 4H-SiC MOSFETs with moderately doped p-body, relevant for power applications. Using this process, improved sub-threshold slope and high channel mobility have been achieved in conjunction with high threshold voltage. Our results indicate that the improvement in transport is associated with Sb donors close to the surface, which have negligible effect on interface trap density.
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