Abstract
We report on the fabrication and characterization of self-aligned organic thin-film transistors with copper gate electrodes structured by nanoimprint lithography (NIL). The process has been improved to increase the compatibility with solution processed materials for future fabrication of fully printed, NIL structured transistors. We provide detailed analysis of the influence of the channel length on the fabricated devices. The on-current, the swing and the onset voltage are studied for channel lengths between 25μm and 800nm. The results indicate that for the given system a channel length of 5μm results in the best device performance regarding the on-current and the subthreshold swing. This work marks a first step towards our goal of fabricating self-aligned NIL OTFTs consisting solely of printable materials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
