Abstract
We have used the IR spectroscopy method and measurements of mechanical stresses in the SiSiO 2 system to investigate water uptake into ion-irradiated SiO 2 films obtained by three different methods using chemical vapour deposition, i.e. through silane oxidation in O 2 at 200 °C and atmospheric pressure, through silane oxidation in O 2 at 300 °C in a low pressure reactor and through tetraethoxysilane decomposition at 700 °C and atmospheric pressure. Ion irradiation of all three types of films leads to a sharp decrease in water uptake kinetics during sample exposure in humid air. The water molecules previously taken up have been found to influence this effect. We have offered an explanation of the results obtained on the basis of the idea that the pore diameters decrease as a result of the interaction of their surfaces with the injected atoms that emerge as the onflowing ions slow down. The adsorbed water molecules on the pore surface in SiO 2 prevent structural rearrangement in films during ion irradiation.
Published Version
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