Change in Topography of InAs Submonolayer Nanostructures at the 2D to 3D Transition

Abstract

The cover page shows schematic illustrations (left) and topographic measurement images (right) of the two forms of molecular beam epitaxy (MBE)-grown stacked submonolayer InAs nanostructures: 2D islands (top) and 3D structures (bottom). The significant change in topography is brought about by the transition from 2D growth regime to 3D growth. The topography of the 2D islands is marked by monolayer-high steps forming a terrace-like pattern, whereas that of the 3D structures is dominated by few-nanometer-high mounds surrounded by sunken plateaus. For further details, see article number 2000349 by Ronel Christian Roca and Itaru Kamiya. - - The article is part of the Special Section on “Compound Semiconductors”, comprising 12 articles, guest edited by Mattias Hammar, Anders Hallén and Sebastian Lourdudoss (see the Guest Editorial, article number 2100012).