Abstract
TiN films are widely used as strengthening coatings for cutting tools. In a previous study, the crystal structure of TiN films deposited by arc ion plating was found to be strongly influenced by the bias voltage during deposition. The TiN films deposited under a high bias voltage were found to have a high compressive residual stress of-9.5 GPa. The residual stresses of the TiN films relaxed to thermal stress levels upon annealing. In the present study, the authors investigate the relaxation of the residual stress during heat treatment in atmosphere for TiN films with different initial residual stress values. The surface layer of the TiN films is oxidized by heat treatment in an air atmosphere. However, the crystalline state of the TiN films is hardly affected. So far, the residual stress of the TiN film hardly changes in a temperature state lower than the heating temperature when it is relaxed by heat treatment.
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