Abstract
An InAs/GaAs quantum dot (QD) solar cell was compared to a similar bulk GaAs p-i-n structure. A 5% increase of the photocurrent was measured in the QD solar cell under Global Air Mass 1.5 condition, accompanied by a smaller value of the open circuit voltage (0.765 V) as compared with the reference GaAs device (0.922 V). The enhanced Urbach tail absorption in QD device greatly contributes to the photocurrent measured below the bandgap. This tail extension also explains the decrease in open circuit voltage in the device and makes it difficult to realize the concept of intermediate band solar cell at room temperature.
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